Search results for "multilayer mask blank"
showing 2 items of 2 documents
Phase defect inspection of multilayer masks for 13.5 nm optical lithography using PEEM in a standing wave mode
2007
We report on recent developments of an "at wavelength" full-field imaging technique for defect inspection of multilayer mask blanks for extreme ultraviolet lithography (EUVL). Our approach uses photoemission electron microscopy (PEEM) in a near normal incidence mode at 13.5 nut wavelength to image the photoemission induced by the EUV wave field on the multilayer blank surface. We analyze buried defects on Mo/Si multilayer samples down to a lateral size of 50 nm and report on first, results obtained from a six inches mask blank prototype as prerequisite for industrial usage. (c) 2007 Elsevier B.V. All rights reserved.
A new approach for actinic defect inspection of EUVL multilayer mask blanks: Standing wave photoemission electron microscopy
2006
Extreme ultraviolet lithography (EUVL) at 13.5 nm is the next generation lithography technique capable of printing sub-50 nm structures. With decreasing feature sizes to be printed, the requirements for the lithography mask also become more stringent in terms of defect sizes and densities that are still acceptable and the development of lithography optics has to go along with the development of new mask defect inspection techniques that are fast and offer high resolution (preferable in the range of the minimum feature size) at the same time. We report on the development and experimental results of a new 'at wavelength' full-field imaging technique for defect inspection of multilayer mask bl…